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PBN Crucible

pBN crucibles are not only widely used in the growth and preparation of single-crystal semiconductor materials such as gallium arsenide (GaAs) and indium phosphide (InP), but also serve as the primary containers for evaporation sources in OLED production lines.

We offer pyrolytic boron nitride (PBN) crucibles. These high-purity (99.9%) PBN crucibles are available in both straight-wall and flanged versions.


Property of PBN Ceramic Material

PropertyUnitValue
Purity%99.99
Metallic Impuritiesppm<10
Grain Sizenma: 2.504 × 10⁻¹⁰
c: 6.692 × 10⁻¹⁰
Crystal Densityg/cm³2.07 - 2.19
Helium PermeabilityPa.m3/s           1×10-10
MicrohardnessN/mm²691.88
Volume ResistivityΩ·m3.11×1011
Tensile StrengthN/mm2 145.6
Flexural StrengthN/mm2151.5
Elastic ModulusGP40
Thermal ConductivityW/m·Ka-direction: 60
c-direction: 2.6
Dielectric Strength(@ 25℃)KV/mm 
Dielectric constant "c" 3.07
Specific heatJ/g·℃0.90(RT)

Key Features of PBN Crucibles and Liners
1. Superior thermal conductivity and thermal shock resistance

2. Easy to clean and suitable for repeated use

3. High chemical inertness; does not react with acids or bases at high temperatures

4. Non-wetting to molten metals

5. Controllable thermal conductivity

6. Convenient to clean and reusable


To ensure safe operation and prolong equipment life, we recommend limiting the use of PBN to temperatures not exceeding 1300°C, with a controlled cooling rate of less than 25°C per minute below 660°C. The crucible should be inspected between each use, and replaced immediately if any signs of cracking are detected.

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